unisonic technologies co., ltd ufr9120 preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-570.a p channel power mosfet ? description the utc ufr9120 is a p-channel power mosfet using utc?s advanced processing technology to provide customers a minimum on-state resistance and high switching speed ? features * fully avalanche rated * high switching speed * extremely low on-resistance * surface mount ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ufr9120l-tn3-r ufr9120g-tn3-r to-252 g d s tape reel ufr9120l-tn3-t UFR9120G-TN3-T to-252 g d s tube note: pin assignment: g: gate d: drain s: source
ufr9120 preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-570.a ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -100 v gate-source voltage v gss 20 v t c =25c -6.6 a continuous t c =100c i d -4.2 a drain current, v gs @-10v pulsed (note 2) i dm -26 a avalanche current (note 2) i ar -6.6 a single pulsed (note 3) e as 100 mj avalanche energy repetitive (note 2) e ar 4.0 mj peak diode recovery dv/dt (note 4) dv/dt -5.0 v/ns power dissipation t c =25c 40 w linear derating factor p d 0.32 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those valu es beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating; pulse width limited by max. juncti on temperature.(see fig.11) 3. starting t j =25c, l=13mh r g =25 ? , i as =-3.9a (see fig.12) 4. i sd -4.0a, di/dt 300a/ s,v dd v (br)dss , t j 25c ? thermal data parameter symbol ratings unit junction to ambient ja 110 c/w junction to case jc 3.1 c/w note: 1. for recommended footprint and solderin g techniques refer to application note
ufr9120 preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-570.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v -100 v breakdown voltage temperature coefficient bv dss /t j reference to 25c, i d =-1ma -0.11 v/c v ds =-100v, v gs =0v -25 drain-source leakage current i dss v ds =-80v, v gs =0v , t j =150c -250 a forward v gs =+20v +100 na gate- source leakage current reverse i gss v gs =-20v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250a -2.0 -4.0 v static drain-source on-state resistance r ds(on) v gs =-10v, i d =-3.9a 0.48 ? dynamic parameters input capacitance c iss 350 pf output capacitance c oss 110 pf reverse transfer capacitance c rss v gs =0v, v ds =-25v, f=1.0mhz 70 pf switching parameters total gate charge q g 27 nc gate to source charge q gs 5.0 nc gate to drain charge q gd v gs =-10v, v ds =-80v, i d =-4.0a (note 1, 2) 15 nc turn-on delay time t d(on) 14 ns rise time t r 47 ns turn-off delay time t d(off) 28 ns fall-time t f v dd =-50v, i d = -4.0a, r g = 12 ? , r d =12 ? (note 1, 2) 31 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s -6.6 a maximum body-diode pulsed current (note 1) i sm mosfet symbol showing the integral reverse p-n junction diode -26 a drain-source diode forward voltage v sd i s =-3.9a, v gs =0v, t j =25c -2.0 v body diode reverse recovery time t rr 100 150 ns body diode reverse recovery charge q rr i f =-4.0a, v gs =0v, di/dt = 100a/s, t j =25c (note 1) 420 630 nc notes: 1. pulse width 300 s, duty cycle 2%. 2. essentially independent of operating temperature.
ufr9120 preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-570.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test - + peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
ufr9120 preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-570.a ? test circuits and waveforms(cont.) v ds 90% 10% v gs t d(on) t r t d(off) t f switching test circuit switching waveforms 10v charge q gs q gd q g v gs gate charge test circuit gate charge waveform v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
ufr9120 preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-570.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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